DX-3000 Hall Effect Device

This Hall effect machine takes some problems that users often ignore, such as instrument configuration, and circuit wiring (including room temperature and low-temperature wiring) into consideration, and selects the Keithley electrical measuring instruments. 
The magnetic field can adopt an electromagnet or liquid helium superconducting magnet based on the user’s requirement, equipped with a smart measurement sample rod, plus a special fully automated test software, allowing users to quickly and easily measure samples and obtain accurate and reliable data. In addition, there are a variety of low-temperature options, and can transform according to the user's existing instrumentation and the special requirements of the software. DX3000 series hall effect measurement system is a powerful tool for the research of materials' electrical transport properties.

Features of DX-3000 Hall Effect Device:

1. Using plug-sample cards, easy to install;
2. One standard configuration can simultaneously measure two samples, and 4 samples can be measured simultaneously by adding optional devices;
3. Resistance measurement range: 0.1mΩ～100GΩ(High voltage and impedance system);
4. Different Hall effect and resistance measurements under different current and magnetic fields;
5. Testing and calculation processes are performed automatically by the software, which gives the intermediate data and the curve at the same time.It will save you a lot of time;
6. The system provides high stability of the magnetic field for a long time, zero magnetic fields can be smoothed;
7. Electromagnet power supply built-in precision Gauss Meter, high field control speed;
8. Choosing low-temperature devices, Hall effect and resistance measurements can be performed at different temperatures.

Testable material of the Hall effect machines:

1. Semiconductor materials: SiGe, SiC, InAs, InGaAs, InP, AlGaAs, HgCdTe and Ferrite materials, etc.
2. Low impedance material: metal, transparent oxide, weak magnetic semiconductor materials, TMR materials, etc.
3. High impedance material: semi-insulating GaAs, GaN, CdTe, etc.

Basic function of DX-3000 Hall Effect Device:

1. Measurement of Hall Effect, magnetic resistance, curves of I-V and R-T;
2. Parameters to be measured: Hall Effect- sheet resistance, resistivity, Hall coefficient, conductivity type, Hall mobility, carrier concentration;
3. Magnetic resistance effect: R, △R, (△R/R)%, (△R/R0)%;
4. I-V curve: I-V curves at different temperatures and magnetic fields;
5. R-T curve: Under a fixed magnetic field, the curves for resistance change at different temperatures;
6. R-H curve: Under fixed temperature, the curves for resistance change at different magnetic fields.

Main Configuration

U.S. Keithley equipment

Magnetic parts

Low temperature portion (optional)

Main technical indexes:

Sample size

1. Small size sample card: 12*12 mm2;
2. Large size sample card: 50*50 mm2;
3. Probe sample card: 1×1mm2～30×30mm2.

Sample measurement method

1. Hall effect samples: Si, GaAs, etc;
2. Resistance and I-V samples: 4-wire or 6-wire method.

Magnetic field environment

Temperature environment (optional)

No liquid helium superconducting magnet system, 1.6K～325K;
Liquid nitrogen thermostat options:

1. Standard liquid nitrogen thermostat, 80K～325K;
2. High temperature liquid nitregen thermostat, 80K～500K;

Cycle refrigerator options:

1. Standard 4K refrigerator system, 4K～325K;
2. High temperature 4K refrigerator, 4K～700K;
3. Standard 10K refrigerator system, 10K～325K;
4. High temperature 10K refrigerator, 10K～800K;
5. Minisize refrigerator system, 45K～325K.

Electrical properties

Under the following typical test conditions:

1. Sample power consumption less than 1mV, under this condition, let excitation reach the maximum recommended current and voltage in system configuration;
2. Sample temperature 295K;
3. Sample seat without leak current;
4. The resistance of each test lead 25Ω;
5. Voltage usage effectiveness of measurement electrical resistivity (V_out/V_in) should be 0.1 approx. for the Vanderbilt sample and should be 0.5 approx. for hall sample;
6. Sample shape correction factor 1;
7. Magnetic field and sample thickness measurement uncertainty should be within 1%;
8. Magnetic field/sample thickness should be 1T/mm, note the measured maximum carrier concentration is approximately proportional to this value, so a stronger magnetic field and thicker sample could improve the measurement range.